Navitas CEO Chris Allexandre and Claros CEO Dan Kultran discuss the planned acquisition, Claros's 40 A IVR chip, and the deal ...

Rad-hard MOSFETs, GaN transistors and other HiRel devices provide reliable power for the telescope’s demanding space mission.

The 650V GaN FET family targets high-efficiency power conversion for AI data centers, computing, industrial and critical ...

Here’s a RoundUp of this month’s must-read news about silicon carbide (SiC), gallium nitride (GaN), and Wide Bandgap ...

The new transformers support flexible voltage and current configurations for PoE, isolated DC/DC and industrial power ...

The new coating line adds localized wet-process separator capacity as North American demand grows for EV and energy storage batteries. Asahi Kasei has opened a new Hipore™ wet-process lithium-ion ...

The TCKE1401NM combines multiple fault-protection functions, low on-resistance and a 4×4mm package for space-constrained designs. Toshiba Electronic Devices & Storage Corporation has introduced the ...

C2i adds digital multiphase control and smart power-stage expertise to Infineon’s portfolio, strengthening power delivery from grid to AI processor. Infineon Technologies has acquired C2i ...

GaN-on-Si is the mainstream power HEMT technology. Many GaN fabs have now migrated to 200 mm (8-inch) GaN-on-Si manufacturing. The long-term (i.e., once the larger diameter process yields are close to ...

The EPC2370 combines 0.28 mΩ on-resistance, 101 A current capability and a 22 V transient rating for high-frequency power conversion. Efficient Power Conversion (EPC) has announced mass production of ...

LSC0580 combines silicon interconnects, integrated passives, and thermal management to reduce the power delivery path to AI processors. AI processors draw more power while operating at core voltages ...

The G3VH relay combines low RDS(ON) resistance, fast switching and 5 kVrms isolation in a compact package. Aratas America LLC, formerly OMRON Electronic Components, has introduced the G3VH, a silicon ...