Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on Power GaN, Modernized Rectification, and Giuseppe Crippa’s Tribute!

In modern AI data centers and Edge computing environments, high power densities and integration levels are mandatory requirements. To meet the demand for efficient power management solutions, ...

EPC Space has introduced the EPC7030MSH, a 300 V radiation-hardened (RH) gallium nitride (GaN) field-effect transistor (FET) that sets a new benchmark for performance in high-voltage, high-power space ...

GaN technology is rapidly gaining traction as a cost-effective alternative to SiC, supported by extensive industry research and growing adoption across sectors.

The University of Michigan has been awarded significant funding to advance heat-tolerant SiC semiconductors from lab to fab.