Navitas CEO Chris Allexandre and Claros CEO Dan Kultran discuss the planned acquisition, Claros's 40 A IVR chip, and the deal ...

Rad-hard MOSFETs, GaN transistors and other HiRel devices provide reliable power for the telescope’s demanding space mission.

The 650V GaN FET family targets high-efficiency power conversion for AI data centers, computing, industrial and critical ...

Here’s a RoundUp of this month’s must-read news about silicon carbide (SiC), gallium nitride (GaN), and Wide Bandgap ...

The new transformers support flexible voltage and current configurations for PoE, isolated DC/DC and industrial power ...

GaN-on-Si is the mainstream power HEMT technology. Many GaN fabs have now migrated to 200 mm (8-inch) GaN-on-Si manufacturing. The long-term (i.e., once the larger diameter process yields are close to ...

The EPC2370 combines 0.28 mΩ on-resistance, 101 A current capability and a 22 V transient rating for high-frequency power conversion. Efficient Power Conversion (EPC) has announced mass production of ...

LSC0580 combines silicon interconnects, integrated passives, and thermal management to reduce the power delivery path to AI processors. AI processors draw more power while operating at core voltages ...

Customer sampling validates Coherent’s 300mm SiC platform for advanced thermal management, packaging and high-density computing. Coherent has begun customer sampling of its 300mm ...

The current sensor combines multiaxial sensing with an algorithm to reduce displacement error and improve torque control in EV powertrains. Texas Instruments (TI ...

In an interview with Power Electronics News, Shyh-Chiang Shen, Director of GaN Program Development Division at VIS, discussed the techniques and innovations VIS used to overcome obstacles, emphasizing ...

One of the more spirited seminars at APEC, due to its topic of GaN versus SiC, was an insightful discussion with many compelling arguments. Wide-bandgap semiconductors—specifically gallium nitride and ...