Silicon-carbide (SiC) MOSFETs have made significant inroads in the power semiconductor industry thanks to a range of benefits over silicon-based switches. These include faster switching, higher ...
LONDON--(BUSINESS WIRE)--The global gate driver IC market is expected to grow at a CAGR of close to 7% during the period 2018-2022, according to a new market research study by Technavio. The report ...
An effective power circuit consists of more than just stationary components like SiC and GaN MOSFETs. The gate driver, an autonomous component, precedes the electronic switches and guarantees optimal ...
Gate drivers are electronic circuits that apply correct power levels to metal-oxide field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). With power-MOSFETs, gate drivers ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started mass production of "TB9103FTG," a gate driver IC [1] for automotive brushed DC motors, ...
If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it ...
Efficiency is the name of the game in power-system design, driven by the need to better leverage available energy and deliver more power from a smaller package. Except in some specialized or extremely ...
How is peak current defined? A close look at datasheet headlines and how they vary. A case study that compares different drivers and peak currents. One question often comes up when considering what ...
Microchip is aiming at motor control by combining a triple half-bridge mosfet gate driver, a 100MHz processor and CAN FD transceivers in the same IC. Other members of the family offer LIN transceivers ...
CISSOID, a supplier of high temperature semiconductors, has developed robust Gate Drivers for XM3 SiC MOSFET power modules from Wolfspeed. The devices are aimed at high power density converters and ...
As part of its research into GaN transistor power supplies, the University of Bristol has created the fastest active gate driver ever – 10x quicker than anything reported so far. Active drivers ...