TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Gallium Nitride (GaN) power amplifier module for use in 5G massive ...

CARLSBAD, Calif.--(BUSINESS WIRE)--MaxLinear Inc. (NASDAQ: MXL) and Qorvo (NASDAQ: QRVO) today announced a combined solution that addresses the critical challenges for 32x32 and 64x64 massive MIMO ...

United Monolithic Semiconductors' CHA8265-98F is a three-stage, high-power amplifier operating between 27.5 and 31 GHz. It ...

A pioneer in the design and fabrication of advanced semiconductors, Northrop Grumman Corporation (NOC) has introduced two new high power gallium nitride (GaN) monolithic microwave integrated circuit ...

We’re starting to get excited about GaN power stages. The Orchard Audio Starkrimson Duo/Trio is the fourth power amplifier in less than two weeks utilizing the technology that we’ve seen or heard.

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new ...

The RA280 integrated amplifier boasts 250-watts per channel using a unique combination of Class AD technology with GaN FETs. For 2024, HiFi Rose is offering a new integrated amplifier, the RA280 which ...

Semiconductor manufacturer SweGaN has partnered with Ericsson to develop power amplifiers for 6G based on gallium nitride-on-silicon carbide (GaN-on-SiC). The project focuses on the 7–15 GHz frequency ...

5G technology has led to the introduction of a significant number of new RF features that need to be implemented in mobile networks while considering stringent constraints in board space and power ...

Researchers at MIT and collaborating institutions have developed a new fabrication process that integrates high-performance gallium nitride (GaN) transistors onto standard silicon CMOS chips. This ...