At this week's VLSI 2015 Symposium in Kyoto (Japan), imec reported new results on nanowire FETs and quantum-well FinFETs towards post-FinFET multi-gate device solutions. As the major portion of the ...

Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel).

At this week's IEEE International Electron Devices Meeting (IEDM 2013), imec reported the first functional strained germanium (Ge) quantum-well channel pMOS FinFETs, fabricated with a Si Fin ...

The IC industry entered the finFET era in 2011, when Intel leapfrogged the competition and rolled out the newfangled transistor technology at the 22nm node. Intel hopes to ramp up its ...

Apple A20 Pro teardown by TechInsights confirms TSMC's 2nm N2 nanosheet transistors are now in mass-market smartphones -- the ...

Since the inception of the integrated-circuit (IC) industry, design metrics such as performance, power, area, cost, and time-to-market have remained the same. In fact, Moore’s law is all about ...

FinFET transistors are now in production at the major foundries, having gone from drawing board to products on the shelf in record time. FinFET adoption has been growing steadily because they deliver ...

GlobalFoundries has announced that its 12nm FinFET technology is ready for production. According to the company, the technology is “optimised for AI Accelerator Applications” and “ideal for ...

Samsung Electronics has announced that its development of the 3 nm gate-all-around (GAA) process called 3GAE is on track and that it has made available version 0.1 of its process design kit (PDK) in ...