Scientists from RWTH Aachen University, AMO GmbH, AIXTRON SE, and EPFL have demonstrated power detectors based on Molybdenum disulphide (MoS 2) that operate at zero bias.
Despite recent improvements in the performance of RF LDMOS field-effect transistors (FETs), temperature drift and aging continue to affect the efficiency and linearization of power amplifiers using ...
A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...
Herein, wafer-scale 8-nm films of Sn-doped gallium oxide (Ga 2 O 3) were fabricated via physical vapor deposition at room temperature. Using these films, 8-nm Sn-doped Ga 2 O 3 field-effect ...
New modeling reveals how strain and high-k dielectrics mitigate phonon scattering in ultra-scaled MoS2 transistors, enhancing ...
In 1947, Shockley, Brattain and Bardeen were investigating the field effect transistor but lead them into inventing the bipolar transistor instead. In 1952, the field effect transistor of Shockley was ...
FET constant current sources use JFETs and MOSFETs to deliver a load current, which remains constant despite changes in load resistance or supply voltage. A FET constant current source is a type of ...
A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...
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